MANUFACTURE OF SILICON SEMICONDUCTOR ELECTRODE COATED WITH THIN FILM

摘要

PURPOSE:To ensure stable performance even for long term usage by coating thin film of noble metal onto the surface of silicon semiconductor then electrolytically polymerizing thiophene compound onto the surface simultaneously with irradiation of light thus forming a film. CONSTITUTION:In order to coat thin film noble metal such as platinum, gold, etc. onto the surface of silicon semiconductor, metal is heated under vacuum to be deposited onto the surface of silicon semiconductor. Then thiophene compound is dissolved into solvent of refined acetonitrile while trifluoro-methane sulfonate tetra-buthyl ammonium is added to condition the solution. Then a silicon semiconductor electrode coated with noble metal and a platimum electrode are immersed to irradiate the light from a light source such as halogen lamp onto the surface of semiconductor electrode while simultaneously positive voltage is applied onto the semiconductor electrode to polymerize electrolytically.