| 摘要 |
PURPOSE:To obtain a heterojunction element having stable, excellent rectifying property, by forming a P-type organic semiconductor of a oxide polymer of an aniline compound, which indicates very stable electric characteristics in air, on the surface of another semiconductor. CONSTITUTION:An oxide polymer of an aniline compound is a substantially linear polymer, wherein a quinonedimine structure basically expressed by a formula in the Figure is a main repeating unit. When an electron acceptor as a dopant is included, conductivity is indicated. The dopant is not restricted if it is a proton supplying material. Halogen, sulfuric acid, methanol and the like are used. A macromolecular weight body is desirable for the polymer. It is suitable when the dopant has the weight of 0.5g/dl and 97% concentrated sulfuric acid solution has the logarithmic viscosity of 0.1-1.0 at 30 deg.C. For example, a P-type organic semiconductor layer 2 of such a polymer is laminated on an N-type Si substrate 1 and an Au ohmic electrode 3 is attached. Then, the heterojunction element having the stable electric characteristics such as rectifying property is obtained. This method can be applied to a p-p'; heterojunction. |
