| 摘要 |
PURPOSE:To obtain an electrostatic damage protecting circuit capable of using DC and AC inputs by using an input protecting resistor formed of a relatively high resistance semiconductor region for a DC input terminal, and using another input protecting resistor for an AC input terminal. CONSTITUTION:The first and second input protecting resistors 2, 3 and a clamping diode 5 are formed in an N<-> type silicon semiconductor substrate 1. The resistor 2 is formed of a P<-> type well layer 8, and aluminum contacting electrodes A, B are formed through a P<+> type diffused layer 9 at both ends. The resistor 3 is formed of a P<+> type semiconductor region 10, and aluminum contacting electrodes C, D are formed at both ends. The first resistor 2 is used as a DC input protecting resistor, and the second resistor 3 is used as an AC input protecting resistor. |
