| 摘要 |
PURPOSE:To prevent a latchup by digging a groove between an NMOS region and a PMOS region to electrically insulate the two. CONSTITUTION:A CMOS inverter is formed of the first and second regions I, II on the main surface of a P-type semiconductor substrate 11, and a boundary region therebetween. N-type impurity layers 13a, 13b to become source and rain of NMOS are formed from the surface of the substrate 11 near the boundary region of the region I. The region II is formed entirely of a deep N-type impurity layer 12, and impurity layers 13a, 13b and P-type impurity layers 14a, 14b to become the source and the drain of PMOS are provided at the opposed portions to the layers 13a, 13b in the layer 12. A groove 15 deeper than the pair of layers 13b, 14b is formed in the boundary region, and a conductive material 16 to become the gate electrodes of both transistors is filled through a thin gate insulating film 18 inside the groove 15. |
