摘要 |
PURPOSE:To obtain an image sensor having excellent linearity to illuminance by coating at least one part of a conductor for connecting a discrete electrode and an analog switch with a metallic film through an insulating film and grounding the metallic film. CONSTITUTION:A photodiode consisting of a transparent electrode 2, an a-Si layer 3 and a metallic electrode 4 is shaped onto a transparent insulating substrate 1 composed of glass, etc. A lead section 22 for the transparent electrode 2 is connected to a metallic lead 5 in order to transmit a signal over a terminal 61 for an IC 6 changing over an optical signal acquired from the photodiode, an insulating film 8 is shaped onto the whole surface while coating the metallic lead 5, and a metallic thin-film 9 is formed. The insulating film 8 is shaped by applying and baking a resin such as epoxy group resin, and the insulating film 8 functions as a damp-proof coating in combination, and protects the metallic lead 5 from corrosion. The metallic film 9 is composed of Al and Ti or two layer films consisting of Al and Ti, and formed through an evaporation method, and the metallic film 9 is grounded electrically. Accordingly, the capacitance of wirings is increased largely, and an output has excellent linearity to illuminance. |