| 摘要 |
PURPOSE:To prevent the dissociation of a V-group element of a III-V compound semiconductor and thereby to obtain an excellent insulating film-semiconductor interface, by providing the semiconductor with a surface stabilizing film which has an amorphous structure and a specific composition. CONSTITUTION:A III-V compound having an amorphous structure from a crystallographic point of view is produced as a surface stabilizing film of a III-V compound semiconductor by a technique of forming a film, such as CVD and PVD. In this case, boron B is used as a III-group element, while nitrogen N is contained as a V-group element, and it is necessary that one or more V-group element constituting the III-V compound semiconductor to be stabilized is contained. Accordingly, said compound has a composition expressed by the general composition formula of an amorphous III-V group compound film. The use of B makes the insulating properties and thermal conductivity excellent, increasing etching properties, and enabling the fine processing by a chemical dry etching process using a gas of CF4+O2 or the like. The content of N increases the insulating properties, while the content of the V-group element of the III-V compound semiconductor to be stabilized prevents the dissociation of the V-group element of the semiconductor when the film is formed. |
