| 摘要 |
PURPOSE:To etch uniformly a large number of workpieces, by supplying an etching gas of high concentration to a reaction vessel intermittently, and by applying a high-output microwave to said etching gas synchronously with the timing of introduction. CONSTITUTION:A mixed gas of CF4 and O2 from a gas source is introduced into a gas vessel 2 through a flow control valve 1 and accumulated therein in the state of high pressure. A solenoid valve 3 puts a gas flow channel in an opened state in synchronization with a pulse signal from a pulse controller 22, and the mixed gas accumulated in the gas vessel 2 is supplied as a gas pulse of high pressure to a plasma generator 4. Since a microwave power source 6 outputs a microwave synchronously with the pulse signal, the gas pulse is turned into plasma by the irradiation of the high-output microwave from a waveguide 7, and it is introduced as an active gas of high concentration into a reaction vessel 9. The active gas introduced into the reaction vessel 9 is dispersed and straightened by a dispersion plate 11 and a straightening plate 13 and then is supplied for etching of each wafer 18. |
