| 摘要 |
<p>PURPOSE:To improve the pattern accuracy of a photomask by exposing a resist film implanted with metallic ions in a lower layer part to form a resist film pattern and forming a metallic film pattern with said resist film pattern as a protective film. CONSTITUTION:A chromium film 12 is deposited on a mask substrate 11 and after the positive type resist film 13 is coated thereon, Na<+> is implanted thereto to form the metallic ions-contg. resist film. The positive type resist film 14 is further coated thereon and the resist films 14, 13 are exposed by an electron beam exposing method and are developed to form the resist film patterns 14, 13. The heat energy by the irradiation of the electron beam is quickly diffused to the entire surface through the metallic ions-contg. resist film 13 and therefore, the local expansion and reduction of the substrate by the beam irradiation are eliminated and the resist film patterns are formed with high accuracy. The exposed chromium film 12 is etched away with such patterns 14, 13 as the protective film, by which the desired pattern is formed.</p> |
