| 摘要 |
PURPOSE:To reduce a variation in a threshold value voltage due to a variation in a gate length by forming a length of an electrode material layer in a channel direction longer than a portion relating to an n-channel transistor at a portion relating to a p-channel transistor. CONSTITUTION:The length of a gate electrode of a p-channel MOS transistor is formed longer than that of an n-channel MOS transistor so that the effective lengths Lne, Lpe of the channels are equalized. Accordingly, if the length L of the electrode is varied when forming the electrode by etching, when a variation in the length L of the same value occurs in the p-channel and n-channel transistors, since the length L is longer in the p-channel transistor, the variation rate of the length L is small. On the other hand, since the length L is shorter in the n-channel transistor, a variation rate of the length L is large. Thus, a variation in a threshold value voltage Vt can be reduced to improve a yield of a product. |
