| 摘要 |
PURPOSE:To decrease the short channel effect, by doping a predetermined part in an extremely fine channel region with an impurity as required in a self- aligning manner with respect to source and drain. CONSTITUTION:A gate SiO2 film 2 and an n-type layer 3 are formed on a p-type Si substrate 1. Then a W film 4 and a PSG film 5 are formed. A W oxide 14 is then formed on the side wall of the W film 4'. The PSG region 5' is re moved. Boron ions are implanted to form a boron implanted region 7. A W oxide 8 is formed by performing heat treatment. Arsenic ions are then implanted, using a gate electrode 60 as a mask, so that source and drains 9 and 10 are formed in self-alignment with the electrode 60. After that, a PSG film 11, an aluminium electrode 12 and a passivation film 13 are formed.
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