| 摘要 |
PURPOSE:To prevent the generation of an interlayer short, caused by the hillocks of the lower wirings, and to improve the interwriting withstand voltage by width of the lower wirings in the cross parts of the upper and lower wirings in 5mum or less. CONSTITUTION:A multilayer interconnection structure is formed uisng an Al- family wiring material. At that time, the width of lower wirings 103' of the parts which are not connected with an upper wiring 105 and all the parts on which the upper wiring 105 is crossed and superposed is formed in 5mum or less. Whereupon, the generation of an interlayer short, which is caused by the hillocks of the lower wirings 13', is prevented. Thereby, the interwiring withstand voltage is remarkedly improved.
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