| 摘要 |
PURPOSE:To continuously form a photoelectric conversion layer by introducing gas raw material and gas oxidizer for forming the photoelectric conversion layer through separate routes into a film forming chamber to chemically contact without intermediary of a plasma reaction. CONSTITUTION:SiH4 gas 20SCCM filled in a gas cylinder 101 and CH4 gas 3SCCM filled in a gas cylinder 102 are introduced through a raw gas input tube 109 into a reaction vessel A. B2H6 10SCCM diluted by 3,000ppm of He gas filled in a gas cylinder 103 is introduced through a raw gas input tube 110 to the vessel A. Simultaneously, He gas 30SCCM filled in a gas cylinder 107 is introduced through a gas input tube 111 to the vessel A. When the gas flow rates are stabilized, the pressure in the vessel A is regulated by an exhaust valve to be set to 0.8Torr, F2 gas 2SCCM filled in a gas cylinder 106 is introduced through the tube 111 into the vessel A in this state. |
