发明名称 |
TANTALUM SPUTTERING TARGET, AND PRODUCTION METHOD THEREFOR |
摘要 |
When backscattered electron diffraction is used to observe the normal direction ND of the rolling surface, i.e. a cross section orthogonal to the sputtering surface of the target, this tantalum sputtering target has an area ratio of crystal grains of which the {100} plane is oriented in ND of at least 30%. The present invention addresses the problem of providing a tantalum sputtering target with which the film-formation rate can be suitably controlled under high-power sputtering conditions. When such a tantalum target is used to form a film by way of sputtering, a thin film exhibiting excellent film-thickness uniformity can be formed, and productivity of the thin film formation process can be improved, even with regard to fine wiring. |
申请公布号 |
WO2016190160(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
WO2016JP64538 |
申请日期 |
2016.05.17 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
NAGATSU Kotaro;SENDA Shinichiro |
分类号 |
C23C14/34;C22C27/02;C22F1/00;C22F1/18 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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