| 摘要 |
PURPOSE:To contrive the improvement in integration degree by composing a recrystallized active element region out of PMOS, NMOS, or CMOS transistors and composing the regions except said recrystallized active element region out of positive elements, wirings, or mutually connected components of them. CONSTITUTION:A MOS transistor 22 of a memory cell is composed of a single crystal silicon 23 and a double layer polysilicon gate 19, and a channel region of the transistor is arranged to be formed in recrystallized active element region (11, 12, 13). A capacitor 17 of the memory cell composed of a cell plate of the single crystal silicon 23 and a single layer polysilicon 18 is arranged in inactive element regions (14, 15). Thus, the channel region of the MOS transistor 2 is arranged in the recrystallized active element region in an SOI structure so as to ensure reliability of the element and the inactive element region is utilized as the capacitor 17, thereby increasing an integration degree up to that close to that on a conventional single crystal silicon substrate. |
