PHOTOCHEMICAL SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a photochemical semiconductor device easily generating hydrogen which is a high energy clean fuel from an aqueous alcohol soln. by joining n-type Si to p-type Si. CONSTITUTION:A photochemical semiconductor device is composed of n-type Si and p-type Si joined to each other. The device is produced by applying a metal such as Ag paste or an In-Ga alloy to n-type and p-type Si plates and joining the plates to each other with the metal in-between or by forming p-type and n-type layers in an Si plate by sputtering or ion implantation so as to form p-n junction. When the photochemical semiconductor device is immersed in an aqueous alcohol soln. and irradiated with light, hydrogen is generated.