| 摘要 |
PURPOSE:To obtain the title single crystal with reduced crystal defect in good yield by adding In and Al to a GaAs single crystal. CONSTITUTION:In and Al are added to a GaAs melt, and the concns. of the In and Al in the GaAs melt are respectively controlled to 2X10<18>-8X10<19>cm<-3>. A crystal is pulled by the liq.-sealed Czochralski method to obtain the GaAs single crystal. As a result, the amt. of impurities to be added is reduced, an impurity hardening effect can be efficiently produced, the growth of a cell generated in case of a high impurity concn. in prevented, and the variations in the electrical characteristic resulting from the difference in the impurity concn. between the head part and the tail part of an ingot can be remarkably improved.
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