| 摘要 |
PURPOSE:To improve ion implantation efficiency for a bipolar transistor emitter and to enhance its operating speed by a method wherein ions are implanted into the emitter region for its development into an amorphous layer equipped with a widened energy gap. CONSTITUTION:A p-type base region 2 is formed in an n-type collector region 1 and a window is provided in an SiO2 film 3 for the formation of an emitter region 4. Next, arsenic ions are implanted into the window in the SiO2 film 3. Silicon ions are then acceleratedly implanted into the window in the SiO2 film 3, whereby crystals are broken down in the emitter region 4 for its conversion into an amorphous layer. A process follows wherein an emitter electrode 5, base electrode 6, etc., are built. With an amorphous emitter region being formed by means of ion implantation, implantation efficiency is improved, which realizes an emitter region equipped with a wider energy gap.
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