发明名称
摘要 PURPOSE:To improve the reliability of the glass sleeve type semiconductor device by setting the hardness of the electrode film at a suitable value and adequately providing the pressing pressure to a semiconductor chip. CONSTITUTION:In the glass sleeve type semiconductor device having a semiconductor chip 1 formed of a semiconductor 6 having a P-N junction, a metallic electrode 5 formed at least on one main surface and other metallic electrode film 7, a pair of external lead electrodes 2 provided at both ends of the chip 1, lead wires 4 integrally welded to the electrodes 2, and a glass sleeve 3 fused around the electrode 2, the Vickers hardness of the metallic electrodes on the chip 6 is set at 20-50. Thus, it prevents the trouble due to the thermal expansion coefficient difference between the chip and the sleeve, and improves the reliability of the device without modifying the conventional manufacturing method.
申请公布号 JPS6255705(B2) 申请公布日期 1987.11.20
申请号 JP19800005775 申请日期 1980.01.23
申请人 HITACHI SEISAKUSHO KK;HITACHI HARAMACHI DENSHI KOGYO KK 发明人 YAMADA MASAHIKO;SHIMA KENZO;SUZUKI KENSUKE;MATSUZAKI MITSUSACHI
分类号 H01L21/60;H01L21/28;H01L23/051;H01L29/43 主分类号 H01L21/60
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