发明名称 SEMICONDUCTOR DEVICE HAVING NEW CONDUCTIVE INTERCONNECTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>A reliable multilevel interconnection structure is attained by using polyacetylene layers. Nondoped polyacetylene is dielectric but is conductive when it is doped with an impurity such as AsF5, which makes it possible to eliminate the necessity of opening a contact hole or through hole in an insulating layer in a process for manufacturing a multilevel interconnection structure so that a disconnection and/or short circuit does not occur due to the evenness of the layers even if the layer of numbers is increased.</p>
申请公布号 EP0075454(B1) 申请公布日期 1987.11.25
申请号 EP19820304904 申请日期 1982.09.17
申请人 FUJITSU LIMITED 发明人 SASAKI, NOBUO
分类号 H01L21/312;H01L21/768;H01L23/532;H01L51/30;(IPC1-7):H01L23/52 主分类号 H01L21/312
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