SURFACE-CHANNEL CCD OPERATED BY SINGLE PHASE CLOCK AND ITS PREPARATION PROCESS

摘要

In the invention, a p-type silicon substrate has an oxide layer consisting of three portions stepped thinner in the different thicknesses of 0.5μm. 0.3 μm and 0.1 μm in the direction of charge transfer; the surface of the substrate interfacing the oxide layer portion of 0.1 μm has boron ion injection in the higher ion density in the first half than in the second one of the surface. The differences in thickness of the oxide layer and in ion density make possible the operation of the device by a singlephase-clock and facilitate the photo etching of the oxide layer.