| 摘要 |
<p>PURPOSE:To prevent a metallic pattern from electrostatic charge without reducing transmissivity by arranging a ground metal film with a linear pattern having thin width on the surface of a transparent substrate and forming a light non- transmissible metal film on the ground metal film. CONSTITUTION:The ground metal film 3 such as indium consisting of extremely thin lines is arranged on the surface of the transparent substrate 2 and the light non-transmissible metal film 4 such as crome with required thickness is formed on the surface of the film 3. The line width of the film 3 is set up to a value sufficiently thinner than the resolution of a stepper. When the space between the films 4 and 3 is pattern-etched so that selectivity of etching can be secured and a mask pattern 5 consisting of plural pattern areas 5a is formed, these pattern areas 5a are mutually and electrically connected by the metal film 3. Consequently, static electricity is not charged to respective pattern area, the generation of discharge in respective pattern areas 5a can be prevented and the mask pattern 5 or the substrate 2 can be prevented from breakdown.</p> |
