| 摘要 |
PURPOSE:To form a submicron pattern through the exposure method of a photolithography, which does not damage the throughput of a wafer, by shaping a fine inversion pattern controlled by the thickness of a side-wall film deposited in an opening pattern. CONSTITUTION:An exposed SiO2 film 3 is etched vertically and a resist pattern 4 as an etching mask is removed, an SiO2 film 5 is deposited through a film deposition method having excellent coatability at a time when a stepped section is coated, and a side-wall film 6 in an opening section is left through anisotropic etching. A positive resist 7 is applied, the surface is flattened through baking, and the SiO2 film 3 and the side-wall film 6 are etched uniformly up to predetermined thickness through dry etching. The unnecessary SiO2 film 3 and side-wall film 6 are removed by buffered hydrofluoric acid, an inversion pattern 8 finer than opening width at an initial stage is shaped, and the WSi film 3 is dry- etched, using the inversion pattern 8 as a mask, thus acquiring a gate electrode 9.
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