| 摘要 |
PURPOSE:To attain the symmetry of source and drain regions regardless of a direction of source and drain to transistor characteristics by forming the source and drain regions by performing the ion implantation uniformly by use of a gate electrode on a semiconductor substrate as a mask while inclining the implanting direction to the substrate surface and rotating the substrate with its center as an axis. CONSTITUTION:After forming a gate insulating film 2 on a surface of a semiconductor substrate 1, a polysilicon film 3 is formed and patterning is done by use of a resist and then, a gate electrode 3 is formed. Next, ion implantation is performed by using the gate electrode 3 as a mask so as to form a source region 4s and a drain region 4d. At that time, the direction of As ion implantation is inclined by 7 deg. from the vertical direction to the semiconductor substrate surface in order to prevent a channeling effect of impurities and thus, a desired quantity of impurity ion implantation is attained. Lastly, a heat treatment is made to form the souxrce and drain regions 4s and 4d to the gate electrode 3.
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