发明名称 SENSE AMPLIFIER EMPLOYING CONTROL CIRCUITRY FOR DECOUPLING RESISTIVE MEMORY SENSE INPUTS DURING STATE SENSING TO PREVENT CURRENT BACK INJECTION, AND RELATED METHODS AND SYSTEMS
摘要 Sense amplifiers employing control circuitry for decoupling resistive memory sense inputs during state sensing to prevent current back injection, and related methods and systems are disclosed. In one embodiment, sense amplifier is provided. The sense amplifier comprises a differential sense input coupled to bit line. The sense amplifier also comprises a differential reference input coupled to reference line. First inverter inverts first inverter input into first inverter output coupled to second inverter input of second inverter, first inverter output configured to provide state of bitcell. Second inverter inverts second inverter input into second inverter output coupled to first inverter input. Control circuit couples differential reference input to first inverter and differential sense input to second inverter in latch mode, and decouples differential reference input to first inverter and differential sense input to second inverter in sensing mode to provide sensed state of bitcell on first inverter output.
申请公布号 EP3092645(A1) 申请公布日期 2016.11.16
申请号 EP20150700521 申请日期 2015.01.05
申请人 QUALCOMM INCORPORATED 发明人 WU, WENQING;NARAYANAN, VENKATASUBRAMANIAN;YUEN, KENDRICK, HOY LEONG
分类号 G11C7/06;G11C7/08;G11C7/22;G11C11/16 主分类号 G11C7/06
代理机构 代理人
主权项
地址