发明名称 WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 A structure according to embodiments of the invention includes a light emitting device for emitting light having a first peak wavelength. A wavelength converting layer is disposed in a path of light emitted by the light emitting device. The wavelength converting layer absorbs light emitted by the light emitting device and emits light having a second peak wavelength. The wavelength converting layer includes a mixture of a wavelength converting material, a transparent material, and an adhesive material, wherein the adhesive material is no more than 15% of the weight of the wavelength converting layer.
申请公布号 EP3092665(A1) 申请公布日期 2016.11.16
申请号 EP20140830664 申请日期 2014.12.16
申请人 KONINKLIJKE PHILIPS N.V. 发明人 MORAN, BRENDAN JUDE;SHCHEKIN, OLEG BORISOVICH;BASIN, GRIGORIY;KMETEC, JEFFREY DELLERT
分类号 H01L33/50 主分类号 H01L33/50
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