发明名称 |
LIQUID COMPOSITION FOR CLEANING, METHOD FOR CLEANING SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT |
摘要 |
[Problems to be Solved] The object is to provide a cleaning liquid composition, which suppresses damage to a low-dielectric constant interlayer dielectric film, a wiring material, such as copper or a copper alloy, a barrier metal, and a barrier dielectric film and removes an organosiloxane thin film, a dry etching residue and a photoresist on a treatment target surface in a process for producing a semiconductor device, as well as a cleaning method for a semiconductor device using the same, and a production process for a semiconductor device using the same. [Solution] A cleaning liquid composition for producing a semiconductor device according to the invention contains 0.05 to 25 % by weight of a quaternary ammonium hydroxide, 0.001 to 1.0 % by weight of potassium hydroxide, 5 to 85 % by weight of a water-soluble organic solvent, and 0.0005 to 10 % by weight of pyrazoles. |
申请公布号 |
EP2863415(B1) |
申请公布日期 |
2016.11.16 |
申请号 |
EP20130804977 |
申请日期 |
2013.06.06 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC. |
发明人 |
SHIMADA, KENJI;ABE, KOJIRO;YOSHIDA, HIROSHI;OHTO, MASARU |
分类号 |
H01L21/02;C11D3/04;C11D3/28;C11D3/30;C11D3/43;C11D7/06;C11D7/32;C11D11/00;G03F7/42;H01L21/311;H01L21/768 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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