| 摘要 |
PURPOSE:To improve the accuracy of aligning a mask by a method wherein a pattern with which the flow of resist will be alleviated is formed on the circumference of an alignment mark, and the step coverage of the resist on an alignment mark is symmetrized. CONSTITUTION:In the semiconductor device having a protruding or recessed positioning pattern 3 for exposure on the surface of a substrate 1, protruding and recessed patterns 2a and 2b are formed between the center of rotation 5, to be used when a rotary coating method is performed on a photoresist 4, and the pattern 3 in the vicinity of the pattern 3. Then, when a photoresist is coated using a rotary coating method, the step coverage of the resist on the pattern 3 can be symmetrically formed by the patterns 2a and 2b. |
