| 摘要 |
PURPOSE:To enable formation of an SOI.FET and a single crystal FET at the same time on the same substrate by a method wherein the pattern of an LOCOS film is formed on the silicon substrate, a poly-silicon film is formed thereon, the poly-silicon film is recrystallized, and the recrystallized silicon film is removed excluding the part to be used as the active region of the SOI.FET. CONSTITUTION:The manufacturing process of the titled device is constructed of a process to form an LOCOS film 2 and channel stopper regions 3 on the surface of a silicon substrate 1, a process to form a poly-silicon film thereon and to recrystallize 4 the poly-silicon film thereof, a process to remove selectively the recrystallized silicon film 4 thereof according to etching, and a process to form an MOS.FET. Accordingly, are SOI (Silicon On Insulator) .FET and a single crystal FET can be formed at the same time on the same substrate l, and formation of a high speed circuit, etc. utilizing the SOI.FET can be attained. |
