Resistance switching device and process for producing thereof

摘要

A resistance switching device having a high resistance variation ratio, an excellent response characteristic, an excellent resistance memory characteristic (retention characteristics) and an excellent repeat resistance. The resistance switching device comprises an n-type oxide semiconductor and first and second electrodes which are disposed so as to interpose at least a part of the n-type oxide semiconductor therebetween wherein a Schottky junction which provides resistance variation/memory characteristics by the application of voltage having different polarities between the first and second electrodes is formed at an interface between the n-type oxide semiconductor and the first electrode; and the first electrode is positioned such that it is in contact with the n-type oxide semiconductor, and has a lower layer which is formed from Au oxide or a Pt oxide or Au or Pt containing oxygen having the thickness of 1-50 nm.

主权项

1. A resistance switching device comprising:
an n-type oxide semiconductor selected from the group consisting of titanium oxide (TiO2),(strontium titanate (SrTiO3), barium titanate (BaTiO3), and a solid solution thereof; a first electrode disposed on a first surface of the n-type oxide semiconductor; a second electrode disposed on a second surface of the n-type oxide semiconductor such that the n-type oxide semiconductor is interposed between the first and second electrodes; and a Schottky junction formed at an interface between a portion of the first electrode and the n-type oxide semiconductor, the portion of the first electrode comprising a platinum containing oxygen layer which abuts the n-type semiconductor, the Schottky junction having resistance variation memory characteristics when a voltage with different polarities is applied between the first and second electrodes.