| 主权项 |
1. A semiconductor light emitting element comprising:
an n-type semiconductor layer that is composed of a group III nitride semiconductor doped with an n-type impurity; a light emitting layer that is laminated on the n-type semiconductor layer, composed of a group III nitride semiconductor, and emits light having a wavelength of not less than 500 nm and not more than 570 nm by passing a current; and a p-type semiconductor layer that is laminated on the light emitting layer, composed of a group III nitride semiconductor doped with a p-type impurity, and has a confinement layer used for confining carriers within the light emitting layer, wherein the light emitting layer comprises:
at least four well layers that are composed of a group III nitride semiconductor; andat least five barrier layers that are composed of a group III nitride semiconductor whose band gap is larger than a band gap of the group III nitride semiconductor of the well layers, sandwich each of the at least four well layers from both sides, and includes an n-side barrier layer connected to the n-type semiconductor layer, a p-side barrier layer connected to the p-type semiconductor layer at an interface portion with the p-type semiconductor layer, and intermediate barrier layers disposed between the n-side barrier layer and the p-side barrier layer,wherein the confinement layer has a thickness not more than 3-times the thickness of each of the at least four well layers,each of the at least five barrier layers is composed of GaN,only the n-side barrier layer, of the at least five barrier layers, is doped with Si,the intermediate barrier layers and the p-side barrier layer are not doped, andthe p-side barrier layer of the at least five barrier layers has a thickness not less than 2-times the thickness of each of the at least four well layers and not more than 4-times the thickness of each of the at least four well layers. |
