| 发明名称 | Photoelectric conversion device and method for manufacturing photoelectric conversion device | ||
| 摘要 | The inventive photoelectric conversion device includes a substrate, a lower electrode layer provided on the substrate, a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer, and a transparent electrode layer provided on the compound semiconductor layer, wherein the compound semiconductor layer has a maximum Ga content variation of not less than 5% as measured in a layer thickness direction, and a maximum In content variation of not less than 6% as measured in the layer thickness direction. | ||
| 申请公布号 | US9496433(B2) | 申请公布日期 | 2016.11.15 |
| 申请号 | US201314436075 | 申请日期 | 2013.10.10 |
| 申请人 | ROHM CO., LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY | 发明人 | Maekawa Takuji;Niki Shigeru;Ishizuka Shogo;Shibata Hajime |
| 分类号 | H01L31/0272;H01L31/065;C23C14/34;H01L31/032;H01L31/10;H01L31/0224;H01L31/0392;H01L27/146;H01L31/18 | 主分类号 | H01L31/0272 |
| 代理机构 | Rabin & Berdo, P.C. | 代理人 | Rabin & Berdo, P.C. |
| 主权项 | 1. A photoelectric conversion device comprising: a substrate; a lower electrode layer provided on the substrate; a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer; and a transparent electrode layer provided on the compound semiconductor layer; wherein the compound semiconductor layer has a Ga content having a maximum variation of not less than 5% as measured in a layer thickness direction, and has an In content having a maximum variation of not less than 6% as measured in the layer thickness direction, the Ga content and the In content varying continuously in the layer thickness direction. | ||
| 地址 | Kyoto JP | ||