| 发明名称 |
HIGH VOLTAGE MOS/BIPOLAR POWER TRANSISTOR APPARATUS |
| 摘要 |
<p>A high voltage MOS/BIPOLAR power transistor assembly is described comprising in a monolithic embodiment thereof, an N channel MOSFET which is integrated with a PNP transistor. A P<+> substrate emitter provides hole injection into an N base layer thereby insuring through conductivity modulation a low "on" resistance. The base current IB which is regulated by the channel resistance eliminates hot spots, forward-biased second breakdown and current hopping.</p> |
| 申请公布号 |
EP0118336(B1) |
申请公布日期 |
1988.04.20 |
| 申请号 |
EP19840400220 |
申请日期 |
1984.02.01 |
| 申请人 |
FAIRCHILD CAMERA & INSTRUMENT CORPORATION |
发明人 |
HU, CHENMING |
| 分类号 |
H01L21/822;H01L21/8249;H01L27/04;H01L27/06;H01L27/07;H01L29/739;H01L29/78;H03K17/567 |
主分类号 |
H01L21/822 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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