| 摘要 |
PURPOSE:To constitute a semiconductor device of a structure, wherein a bipolar transistor and a MOS transistor are mixed, by a method wherein an N-type region is provided in the P-type drain of a P-MOS transistor Tr, and the P-MOS Tr and an N-P-N Tr are integrally constituted. CONSTITUTION:The N-type well region of a P-MOS Tr and an N-type region 13 to become to the collector region of an N-P-N Tr are formed in a P-type substrate 11 and an electrode leading-out region 19 is provided in this region 13. Moreover, P-type source and drain regions 16 and 17 are provided on both sides of the gate electrode 15 of the P-MOS Tr and a high-concentration N-type region 18 is selectively provided in this drain region. thereby, the N-P-N Tr is formed using the drain region 17 as its base, using the N-type region 18 provided in the drain region as its emitter and moreover, using the N-type region 13 in the P-type substrate 11 as its collector. |
