| 摘要 |
<p>PURPOSE:To stably execute an operation even under an intense light irradiation by forming a light shielding layer on the surface of the opposite side of the surface on which a circuit of single crystal silicon has been formed. CONSTITUTION:As for an element substrate, a device layer consisting of single crystal silicon 3 and an insulator 4 which are adjacent to each other is stuck to a holding substrate 1. In the single crystal silicon 3, an active element consisting of a MOS transistor is formed at the substrate 1 side, and the same light shielding layer 24 is formed at the opposite side of the substrate 1. A connecting electrode 37 is formed by making a contact hole in the insulator 4, by which an electrical connection is taken. A source area 11 and a drain area 10 use a gate electrode 7 as a mask and generated as a self-alignment by an ion implantation. In such a MOS transistor, the light shielding layer 24 is formed so as to cover a channel part of a MOS-FET, and a malfunction under an intense light irradiation is prevented, and the device is operated stably.</p> |
