摘要 |
PURPOSE:To form a thin-film being not damaged by X-rays and high-speed ions and containing no impurity, sputtering gas, etc. by arranging a target and a substrate in a vacuum tank, evacuating the inside of the vacuum tank by using an exhaust system and irradiating the target with a laser from the outside of the vacuum tank. CONSTITUTION:A target 2 such as silicon and a substrate 3 such as silica glass are opposed approximately and disposed into a vacuum tank 1, and the inside of the vacuum tank 1 is evacuated by employing an exhaust system 4. The target 2 is irradiated with an argon laser 5 having a high output positioned outside the vacuum tank 1. A target material is evaporated through laser irradiation, and the evaporated atoms-molecules 7 reach up to the substrate 3 and adhere, thus shaping a thin-film. Consequently, the silicon thin-film having high quality can be formed onto the silica glass. The substrate 3 may also be heated by using a heater 6. An insulating film consisting of silicon, germanium, GaAs, SiC, SiN, SiO2, etc. and an organic material composed of PC, etc., may also be employed as the silica glass.
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