发明名称 MANUFACTURE OF THIN-FILM
摘要 PURPOSE:To form a thin-film being not damaged by X-rays and high-speed ions and containing no impurity, sputtering gas, etc. by arranging a target and a substrate in a vacuum tank, evacuating the inside of the vacuum tank by using an exhaust system and irradiating the target with a laser from the outside of the vacuum tank. CONSTITUTION:A target 2 such as silicon and a substrate 3 such as silica glass are opposed approximately and disposed into a vacuum tank 1, and the inside of the vacuum tank 1 is evacuated by employing an exhaust system 4. The target 2 is irradiated with an argon laser 5 having a high output positioned outside the vacuum tank 1. A target material is evaporated through laser irradiation, and the evaporated atoms-molecules 7 reach up to the substrate 3 and adhere, thus shaping a thin-film. Consequently, the silicon thin-film having high quality can be formed onto the silica glass. The substrate 3 may also be heated by using a heater 6. An insulating film consisting of silicon, germanium, GaAs, SiC, SiN, SiO2, etc. and an organic material composed of PC, etc., may also be employed as the silica glass.
申请公布号 JPS63119220(A) 申请公布日期 1988.05.23
申请号 JP19860264570 申请日期 1986.11.06
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MIYAUCHI MICHIHIRO;ISHIHARA SHINICHIRO
分类号 H01L21/203 主分类号 H01L21/203
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