| 摘要 |
PURPOSE:To conduct even the annealing of the interface of a crystallizing section and an untreating section at a time during laser irradiation by simultaneously performing annealing after crystallization by irradiating a thin-film with second laser beams dissolving the thin-film during a time when the thin-film is preheated by first laser beams and irradiating the thin-film with first laser beams. CONSTITUTION:Laser beams 4 emitted from a laser 3 are divided into two by a half mirror 5, and a section to be crystallized is each irradiated with laser beams by using reflecting mirrors 6, 7. The reflecting mirror 7 reflecting laser beams 8 employed as annealing after preheating and crystallization is fixed, and the wide range of an Si thin-film 1 is irradiated with laser beams 8. Laser beams 9 dissolving and crystallizing the Si thin-film 1 are reflected by the reflecting mirror 6. The reflecting mirror 6 can be moved and made to scan within a narrow range. The reflectivity of the crystallizing section 10 is investigated by using a certain specified wave range in order to decide the accurate crystallization of the crystallizing section. A substrate 2 is placed on a stage, and shifted.
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