| 摘要 |
PURPOSE:To enhance the preciseness in finishing by sticking a semiconductor base-plate to No.1 wax on a quartz plate, adhering the quartz plate to a fixture using No.2 wax 2, and then performing grinding of the rear face of semiconductor base-plate. CONSTITUTION:On a quartz plate 3 ground in high precision, No.1 wax 4 is formed uniformly by spinner method, and thereupon a semiconductor base-plate 5 is stuck, which is of 450mum thick. On the hot plate, a quartz plate 3 is stuck in the same manner to a fixture 1. In this condition, the semiconductor base- plate 5 is put in contact with grinding liquid, and rear face grinding is performed until the thickness becomes approx. 100mum. In case semiconductor of approx. 450mum thick is processed so as to have a thickness of approx. 100 mum, high processed finishing can be made, where the grinding unevenness in a plane is approx. + or -5 mum. |
