| 摘要 |
PURPOSE:To make a setting value of the thickness l of an active layer large and obtain a surface light emitting type semiconductor laser device to be operated by a low current enough to generated CW oscillations, at a room temp. by forming a semiconductor layer having a multilayer structure after holding a plurality of the first conductivity type active layers alternately between respective second conductivity type semiconductor layers and by causing a current to flow uniformly to these active layers. CONSTITUTION:Respective layers of a P-type AlGaAs/GaAs multiquantum well layer 1 working as an active layer are alternately sandwiched by an N-type AlGaAs layer 2 further, are laminated to multilayers to form a P-N junction. In the case of a multilayer structure composed of the P-type AlGaAs/GaAs multiquantum wall layer 1 as well as the N-type AlGaAs layer 2 that are laminated to the multilayers, N-type and P-type impurities of them are separately and selectively diffused from the surface sides and N-type and P-type impurity diffused regions 20 and 21 are respectively formed. Accordingly, respective N-type and P-type electrodes 30 and 31 are provided at the prescribed surface parts of the above regions 20 and 21. When a prescribed voltage is impressed to the above electrodes 30 and 31, most of the impressed currents are selected by carriers (in this case, they represent electrons) that are implanted into respective active layers. |
