| 摘要 |
PURPOSE:To eliminate steep inclines from a temperature gradient and to prevent a semiconductor substrate from cracks by a method wherein a heattransmitting metal band layer is provided, enclosing a semiconductor pellet, in the vicinity of a group of protruding electrodes. CONSTITUTION:A heat-transmitting metal band layer 51 is formed, on an insulating film 2, enclosing a semiconductor pellet 10 and extending along its outermost circumference. As for the temperature distribution in case the metal band layer 51 exists on the insulating film 2, the difference in temperature between bumps 4 or the temperature gradient is moderated because of changes introduced into the isothermal lines because of the heat-transmitting feature of the metal band layer 51. Further, when the temperature of the metal band layer 51 is caused to rise by the supply of radiant energy 6, for example an infrared laser beam, the difference in temperature between the bumps 4 or the temperature gradient will be further moderated.
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