| 摘要 |
PURPOSE:To improve the stability of a dual gate FET by connecting a series circuit comprising a resistor and a capacitor between a drain of an output transistor (TR) and a source of an input TR. CONSTITUTION:A series element 3 comprising a resistor R and a capacitor C is connected in parallel between the drain of the output FET 2 and the input FET 1. The RC series element is formed on one and chip face of the dual gate microwave FET and connected in parallel between the drain and source to improve the stability (stable factor) of the microwave dual gate FET thereby improving the degree of design remarkably in the case of the circuit design.
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