| 摘要 |
PURPOSE:To prevent short-circuit between the upper and lower layers of interconnect by performing a short-time thermal treatment by a ramp annealing method after forming an Al/Si layer of interconnect so as to increase the crystal grain diameter, thereby suppressing the hillock growth by a subsequent thermal treatment. CONSTITUTION:After forming a first Al/Si layer of interconnect 13 by means of a multilayer interconnection technique, a ramp annealing is carried out to enlarge the crystal grain of Al/Si. Whereupon, the hillock occurrence is suppressed at the time of forming a inter-layer insulating film, so that short- circuit between the first Al/Si layer of interconnect 13 and a second Al/Si layer of interconnect is prevented.
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