| 摘要 |
PURPOSE:To enhance the reaction probability of an etching seed by irradiating far infrared, infrared or near infrared light of a specific wavelength or specific wavelength range for vibrating a bond between constituent atoms of a desired material to be etched. CONSTITUTION:CHF3 and He are introduced through a gas tube 3 to a reaction chamber 5, and exhausted through an exhaust tube 4 at a predetermined flow rate to set the pressure in the chamber 5 to approx. 2 Torr. A radio wave of 13.6MHz is applied from a high frequency power source 6 to an upper electrode 13 to generate a plasma. Simultaneously, a light irradiated from a glow lamp 7 of an infrared light source is condensed by a concave reflecting mirror 8 plated with aluminum as a single-axis ray, and a ray having main wavelength of 9.3mum is spectrally obtained by an interference filter 9. The spectral infrared light 10 is transmitted through a window plate 12 of thallium iodide material mounted at the top of the chamber and the electrode 13 to etch a substrate surface by irradiating it perpendicularly thereto.
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