发明名称 ELECTRODE CONSTRUCTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To eliminate hardness control and form an electrode easily by a method wherein an electrode metal construction is composed of an electrode metal multilayer which contains at least one barrier metal electrode layer between a silicon part and itself and has a copper electrode layer as the uppermost layer to which a wire is bonded. CONSTITUTION:When copper wires 10a and 10b are bonded to electrode metal layers, each electrode metal layer is composed of an electrode metal multilayer which contains at least one barrier metal electrode layer 6a or 6b between a silicon part and itself and a copper electrode layer 7a or 7b as the uppermost layer to which the wire is bonded. Therefore an electrode metal structure as an object of wire bonding is composed of a single metal layer of copper which has a sufficient strength as compared with an aluminum electrode. With this constitution, hardness control can be eliminated when the electrode is formed.
申请公布号 JPS63148649(A) 申请公布日期 1988.06.21
申请号 JP19860297069 申请日期 1986.12.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 TANAKA MAKOTO
分类号 H01L29/43;H01L21/28;H01L21/60 主分类号 H01L29/43
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