| 摘要 |
PURPOSE:To improve the producibility of a magnetic bubble memory element which has less characteristic deviation even if a mask alignment shifts, by providing a conductor pattern with a projecting part overlapping with the tip part of a ''Permalloy '' pattern. CONSTITUTION:A conductor pattern 5 has a projection part 5a wider than a ''Permalloy '' in the lengthwise extending direction of the pattern 3a. Consequently, even if a mask alignment shifs in position, the tip part of the pattern 3a overlaps with the projection part 5a invariably to improve such a problem that the difference in level of the conductor pattern 5 makes the tip part of the pattern 3a smaller due to a deficiency of the contacting of the photomask. Further, little current flow through the projection part 5a, so a magnetic field distribution is nearly equal to that when the projection part 5a is not provided, thereby disregarding influence upon transfer-in gate current characteristics. |
