| 摘要 |
PURPOSE:To provide an electron beam emission type semiconductor diode having a thickness for maximizing an amplitude response in a semiconductor layer or the thickness approximate to said thickness. CONSTITUTION:A power source 7 is connected between a semiconductor layer 1 and an electrode 5 with the positive terminal as a semiconductor 1 side through a load resistor 8, and a reverse bias is applied to a P-N junction 3. Thus, when an electron beam 9 is emitted to the layer 2 through the electrode 5 and the semiconductor region 4 from the exterior of the electrode 5 side in the state that the depletion layer expanding from the junction 3 is expanded to depleting the layer 2, electrons and holes are outputted to the external load resistor 8 with the multiplied current as an output current responsive to the emitted amount of the electron beam in a mechanism for generating electrons and holes in the layer 2 in response to the emitted amount, multiplying them in the layer 3 and reaching them to the region 4 and the layer 1. With this structure, the layer 2 has a thickness for maximizing the amplitude response depending upon the carrier velocity in the layer of the output current or the thickness approximate to said thickness. |
