发明名称 PRODUCTION APPARATUS FOR SINGLE CRYSTAL
摘要 PURPOSE:To regulate temperature distribution of a melt near interface between solid and liquid, level the interfacial shape and grow a high-quality single crystal without crystal defects, by dipping a molded article made of a specific heating element in a crucible containing a raw material melt and liquid encapsulating agent and pulling up a crystal. CONSTITUTION:A raw material melt 2 and a liquid encapsulating agent 3, (e.g. B2O3) are placed in a crucible 4 supported in a rotatable and liftable manner through the lower shaft 6 and a cylindrical molded article 9, having a heating means, supported by electrodes 10 for molded article heater at the upper both ends and formed from a heating element, such as carbon coated with PBN on the surface thereof, so as to provide a wide and thick upper part, narrow and thin lower part and a small opening part at the tip thereof is placed to be dipped in the raw material melt 2. Respective temperatures are detected by temperature sensors 11 provided at the bottom of the crucible 4, heater 7 and back side of the molded article 9 and a current is passed through the above-mentioned molded article 9 to generate heat and regulate temperature distribution of melts 2 and 3 near the interface between solid and liquid. A seed crystal attached to the lower end of a rotatable and liftable pulling up shaft 5 is then dipped in the raw material melt 2 melted by the heater 7 and a single crystal 1 for pulling up is pulled up and grown through the seed crystal.
申请公布号 JPS63195189(A) 申请公布日期 1988.08.12
申请号 JP19870027296 申请日期 1987.02.10
申请人 SUMITOMO ELECTRIC IND LTD 发明人 KOTANI TOSHIHIRO;TADA KOJI
分类号 C30B15/14;C30B15/12;C30B27/02 主分类号 C30B15/14
代理机构 代理人
主权项
地址