| 摘要 |
PURPOSE:To enable stable production of diamond having excellent characteristics, by forming the surface of a constituent member from Au, Cu, Mo, Si, Ta, etc., in introducing a reaction gas into a reaction vessel and carrying out vapor growth of the diamond. CONSTITUTION:A reaction gas is introduced into a reaction vessel and diamond is formed on the surface of a substrate by a chemical vapor growth method. In the process, members (constituent members) other than the substrate and hot filament are heated to >=400 deg.C. The surface of the heated substrate is formed from one or more of Au, Cu, Mo, Si, Ta, W, graphite, alumina, silica, zirconia, Si, carbide, Ti carbide, etc. Since methyl radicals and hydrogen atoms in the reaction gas are not inactivated even by heating, diamond having excellent characteristics is grown.
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