| 摘要 |
PURPOSE:To improve the characteristics of a Schottky barrier diode and to contrive to simplify the production process of the diode by a method wherein electrode layers not containing silicon are adhered and after an alloy growth of the layers and an insular region is promoted, silicon-containing electrode layers are adhered. CONSTITUTION:A P-type base region 6, an N-type emitter region 7 and a collector contact region 8 are diffused in the surface of an insular region 5 of a P-type semiconductor substrate 1 and an N-P-N transistor is constituted. After a cathode contact region 9 is formed, pure Al is adhered on the whole surface to form electrode layers 13 and a heat treatment is performed. Then, Al containing silicon of 1-2 wt. % is adhered on the whole surfaces of the layers 13 to form electrode layers 14. Lastly, the layers 13 and 14 are patterned by photoetching and a heat treatment is performed to form electrode wirings. By such a way, an alloy growth of the layers 13 and the region 5 is promoted, a Schottky barrier diode having good characteristics is obtained and its production process is also simplified.
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