| 摘要 |
PURPOSE:To realize low noise/low input V.S.W.R capable of being operated stably by selecting properly the capacitance of a capacitor inserted in series or in parallel with a source inductance. CONSTITUTION:It is possible to realize the low noise/low input V.S.W.R by inserting a proper inductance 4 at a prescribed band to a source electrode of an FET. However, the inductance 4 at a higher frequency than the required band has an impedance of jWL and the source is not regarded to be connected completely to ground and the isolation between the drain and gate of the FET is deteriorated. A capacitance 5a is inserted in series with the inductance with a proper value, then the impedance is jWL-1/WC). Thus, in selecting the L, C, the source is regarded to be connected completely to ground, and the isolation is improved to obtain a stable amplifier at a wide band.
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