| 摘要 |
PURPOSE:To obtain a mask showing no mask crack and no distortion of a transcription pattern by a method wherein the mask is constituted symmetrically in order to eliminate the stress strain due to a difference in the coefficient of thermal expansion at a silicon substrate, a silicon oxide film and a silicon nitride film. CONSTITUTION:A recessed part 13 is made in a mask pattern formation region of a silicon substrate 10 in such a way that its depth is nearly half the thickness of the substrate 10 as measured from one face of a corresponding part. The face of the substrate 10 including the recessed part 13 is oxidized so as to grow a silicon oxide film 14; after that, a silicon nitride film 16 is deposited on the surface of the film 14. In succession another recessed part 17 which reaches the film 14 from the other face of a corresponding part is made in the mask pattern formation region of the substrate 10; the surface of the substrate containing the recessed part 17 is oxidized under the same condition as that of the above oxidation process. After that, metal patterns composed of gold, tantalum or the like with the big X-ray absorptivity are formed on the surface of the silicon oxide film inside the recessed part 17. Lastly, a silicon nitride film 20 is depositing on the other face of the substrate 10 including the recessed part 17 containing the patterns under the same condition as the deposition process of the film 16. |
